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  • Jerzy Kanicki
  • Department of Electrical Engineering and Computer Science
    Macromolecular Science & Engineering Center
    2307 EECS Building,1301 Beal Avenue
    Ann Arbor, MI 48109-2122

Short Biosketch

Jerzy Kanicki received his Ph. D. degree in Sciences (D. Sc.) from the Free University of Brussels (Université Libre de Bruxelles), Brussels, Belgium, in 1982. He subsequently joined the IBM Thomas J. Watson Research Center, Yorktown Heights, New York, as a Research Staff Member working on hydrogenated amorphous silicon devices for the photovoltaic and flat panel display applications. In 1994 he moved from IBM Research Division to the University of Michigan as a Professor in the Department of Electrical Engineering and Computer Science. At the present, his research interests within the Electrical and Computer Engineering (ECE) division of EECS, include organic and molecular electronics, thin-film transistors and circuits, and flat panel displays technology including organic light-emitting devices.

Awards/Honors

Current Research

List of Recent and Top Cited Publications

  1. pdf C. Chen, K. Abe, H. Kumomi, and J. Kanicki, “a-InGaZnO Thin-Film Transistors for AMOLEDs: Electrical Stability and Pixel-circuit,” J. of the SID, vol. 17/6, pp. 525-34, 2009.
  2. pdf C. Chen, K. Abe, T.-C. Fung, H. Kumomi, and J. Kanicki, “Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays,” Jap. J. Appl. Phys., vol. 48, pp. 03B025-1-03B025-7, 2009.
  3. pdf H. Lee, G. Yoo, J.-S. Yoo, and J. Kanicki, “Asymmetric Electrical Properties of Fork a-Si:H Thin-Film Transistor and Its Application to Flat Panel Displays,” J. Appl. Phys., vol. 105, pp. 124522, 2009.
  4. pdf C. Chen, K. Abe, H. Kumomi, and J. Kanicki, Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies,” IEEE Trans. Elec. Dev., vol. 56. pp. 1177-1183, 2009.
  5. pdf T.-C. Fung, K. Abe, H. Kumomi, and J. Kanicki, Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors,” J. Display Tech., vol. 5, pp. 452-461, 2009.
  6. pdf T.-C. Fung, C.-S. Chuang, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, “Two-Dimensional Numerical Simulation of Radio Frequency Sputter Amorphous In–Ga–Zn–O Thin-Film Transistors,” J. Appl. Phys., vol. 106, pp. 084511, 2009.
  7. pdf H. Lee, J.S. Yoo, C.-D. Kim, I.-B. Kang, and J. Kanicki, "Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays" IEEE Trans. on Elec. Dev., vol. 55, pp. 329-336, 2008.
  8. pdf A. Kuo, T. Kyung Won, and J Kanicki, "Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance" Jpn. J. Appl. Phys., pp. 3362–3367, 2008.
  9. pdf A. Kuo, T. Kyung Won, and J Kanicki, "Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and Stability" IEEE Trans. on Elec. Dev., vol. 55, pp. 1621-1629, 2008.
  10. pdf H. Lee, C.-S. Chiang, and J. Kanicki, "Dynamic Response of Normal and Corbino a-Si:H TFTs for AM-OLEDs," IEEE Trans. Elev. Dev., vol. 55, pp. 2338-2347, 2008.
  11. pdf T.-C. Fung, C.-S. Chuang, K. Nomura, H.-P. D. Shieh, H. Hosono, and J. Kanicki, "Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors," Journal of Information Display, vol. 9, pp. 21-29, 2008.
  12. H. Lee, J. S. Yoo, C.-D. Kim, I.-J. Chung and J. Kanicki, “Asymmetric Electrical Properties of Corbino a-Si:H TFT and Cencepts of Its Application to Flat Panel Displays,” IEEE Trans. Elec. Dev., vol. 54, pp. 654-662, 2007.
  13. H. Lee, Y.-C. Lin, H.-P.D. Shieh and J. Kanicki, “Current-Scalling a-Si:H TFT Pixel-Electrode Circuit for AM-OLEDs: Electrical Properties and Stability,IEEE Trans. Elec. Dev., vol. 54, pp. 2403-2410, 2007.
  14. H. Lee, J.S. Yoo, C.-D. Kim, I.-J. Chung and J. Kanicki, “Novel Current-Scaling Current-Mirror Hydrogenated Amorphous Silicon Thin-Film Transistor Pixel Electrode Circuit with Cascade Capacitor for Active-Matrix Organic Light-Emitting Devices,Jpn. J. Appl. Phys., vol. 46, pp. 1343-1349, 2007.   
  15. P.B. Shea, L.R. Pattison, M. Kawano, C. Chen, J. Chen, P. Petroff, D. Martin, H. Yamada and N. Ono, and J. Kanicki, “Solution-Processed Polycrystalline Copper Tetrabenzoporphyrin Thin-Film Transistors,” Synthetic Metals, vol. 157, pp. 190-197, 2007.
  16. P.B. Shea, C. Chen, and J. Kanicki, L.R. Pattison and P. Petroff, H. Yamada and N. Ono, “Polycrystalline Tetrabenzoporphyrin Organic Field-Effect Transistors with Nanostructured Channels,” Appl. Phys. Lett., vol. 90, pp. 233107-1-233107-3, 2007.
  17. A.R. Johson, S.-J. Lee, J. Klein, and J. Kanicki, “Absolute Photoluminescence Quantum Efficiency Measurement of Light-Emitting Thin Films,” Rev. Sci. Intrum., vol. 78, pp. 096101-1 – 096101-3, 2007.
  18. J.S. Yoo, H. Lee, J. Kanicki, C.-D. Kim and I.-J. Chung, “Novel a-Si:H TFT Pixel Circuit for Electrically Stable Top-Anode Light-Emitting AMOLEDs,” J. SID, vol. 15/8, pp. 545-551, 2007.

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